Xuanqi Chen’s Oxide-Transistor Research

Field notes

The homepage teaches the research through a five-step sequence rather than presenting a conventional publication list alone. Its diagrams distinguish conceptual geometry and normalized teaching curves from measured results, while the publication section gives concrete operating conditions, including a reported sub-5 mV threshold shift at 1 ks, 5 MV/cm, and 415 K. The portfolio also points to work spanning fluorine-treated devices from 77–375 K, hydrogen-related instability, and room-temperature threshold engineering.